材料学院学术报告--电场可调控的整流磁电阻和隧穿整流磁电阻效应
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应材料学院电子封装系邀请,山东大学物理学院田玉峰副教授,将于629号访问我校材料科学系并作相关学术报告,欢迎感兴趣的师生参加。

报告时间:2017629日(周四)下午1630

报告地点:石墨楼401

报告题目:电场可调控的整流磁电阻和隧穿整流磁电阻效应

报告摘要:磁阻和整流是异质结的两个基本物理性质,分别在自旋电子学器件中广泛应用。不同于众所周知的各种磁电阻效应,在这里,我们报告两种全新的大磁电阻,可以作为整流磁电阻(RMR)和隧穿整流磁电阻阻(TRMR)。由于在非磁性Al/Ge肖特基结中电荷相关的整流和轨道相关的磁电阻效应,可以研究整流电阻。在Co/CoO-ZnO/Co中电荷相关整流和自旋相关隧穿整流磁电阻效应相结合的非对称隧穿势垒中研究隧道磁电阻。在这两种情况下,对所研究的一个异质结构施加一个小正弦交流电能产生显著的直流电压,并且这个整流电压随外加磁场变化。此外,通过对研究装置直接施加直流与交流发明了对于RMRTRMR控制的一种创新技术,使得磁阻可以在很宽的范围内得到显著的调节。

Abstract

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report two brand new large magnetoresistance that can be regarded as rectification magnetoresistance (RMR) and tunneling rectification magnetoresistance (TRMR). RMR is observed in the nonmagnetic Al/Ge Schottky heterojunctions as a result of the integration of charge-related rectification and orbital-related magnetoresistance effect, while TRMR is observed in the Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers as a consequence of the integration of charge-related rectification and spin dependent tunneling magnetoresistance effect. In both cases, the application of a pure small sinusoidal alternating-current to the studied heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. Moreover, an innovative technique for electrical control of RMR and TRMR has been developed by applying direct current and alternating current simultaneously to the studied devices, where the magnetoresistance could be remarkably tuned in a wide range.

主讲人简介:

田玉峰,博士,山大学物理学院副教授。主要研究领域是磁性薄膜与自旋电子器件。2009年在山东大学物理学院获得博士学位, 2010年开始在新加坡南洋理工大学做博后,20131月加入山东大学物理学院工作。近年来在NanoscaleScientific ReportsPhys. Rev. BAppl. Phys. Lett.等期刊上发表SCI论文51篇,已发表论文引用730余次;还参与撰写了《自旋电子学导论》第一章。
文章发布员:林日升